Toshiba’s New Discrete IGBT for Voltage Resonance Circuits Contributes to Lower Power Consumption and Easier Design of Equipment
TOKYO--(BUSINESS WIRE)--Dec 23, 2019--
Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched the “GT20N135SRA,” a 1350V discrete IGBT for use in voltage resonance circuits in tabletop IH cookers, IH rice cookers, microwave ovens and other home appliances. Shipments start today.
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Toshiba: a 1350V discrete IGBT “GT20N135SRA” for use in voltage resonance circuits in tabletop IH cookers and other home appliances. (Photo: Business Wire)
GT20N135SRA features a collector-emitter saturation voltage  of 1.75V and a diode forward voltage  of 1.8V, approximately 10% and 21% lower, respectively, than for the current product . Both the IGBT and diode have improved conduction loss characteristics at high temperature (T C =100℃), and the new IGBT can help reduce equipment power consumption. It also features a junction-to-case thermal resistance of 0.48℃/W (max), about 26% lower than that of the current product , allowing easier thermal design.
The new IGBT suppresses short circuit current that flows through the resonance capacitor when equipment is switched on. Its circuit current  peak value is 129A, about a 31% reduction from the current product . As its safe operating area is widened, it makes equipment design easier compared to the current product .
Home appliances (such as tabletop IH cookers, IH rice cookers and microwave ovens) that use voltage resonance circuits
(Unless otherwise specified, @T a =25 °C)
Absolute maximum ratings
Collector-emitter saturation voltage
@I C ＝20A,
V GE =15V
Diode forward voltage
@I F =20A,
V GE =0V
Junction-to-case thermal resistance
@T C =25℃
@T C =100℃
 As of June 2019, values measured by Toshiba. (Test condition: I C =20A, V GE =15V, T C =100℃)
 As of June 2019, values measured by Toshiba. (Test condition: I F =20A, V GE =0V, T C =100℃)
 Toshiba’s current product “GT40RR21”
 As of June 2019, values measured by Toshiba. (Test condition: V CC =300V, V GG =15V, C=0.33μF, t=5μs, T a =25℃)
Follow the link below for more on the new product.
Follow the link below for more on Toshiba IGBT line-up.
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Power Device Sales & Marketing Department
Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.
About Toshiba Electronic Devices & Storage Corporation
Toshiba Electronic Devices & Storage Corporation combines the vigor of a new company with the wisdom of experience. Since becoming an independent company in July 2017, we have taken our place among the leading general devices companies, and offer our customers and business partners outstanding solutions in discrete semiconductors, system LSIs and HDD.
Our 19,000 employees around the world share a determination to maximize the value of our products, and emphasize close collaboration with customers to promote co-creation of value and new markets. We look forward to building on annual sales now surpassing 700-billion yen (US$6 billion) and to contributing to a better future for people everywhere.
Find out more about us at https://toshiba.semicon-storage.com/ap-en/company.html
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KEYWORD: JAPAN ASIA PACIFIC
INDUSTRY KEYWORD: SEMICONDUCTOR CONSUMER ELECTRONICS TECHNOLOGY MANUFACTURING OTHER TECHNOLOGY OTHER MANUFACTURING HARDWARE
SOURCE: Toshiba Electronic Devices & Storage Corporation
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PUB: 12/23/2019 12:00 AM/DISC: 12/23/2019 12:00 AM