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Toshiba’s New Discrete IGBT for Voltage Resonance Circuits Contributes to Lower Power Consumption and Easier Design of Equipment

December 23, 2019 GMT
Toshiba’s New Discrete IGBT for Voltage Resonance Circuits Contributes to Lower Power Consumption and Easier Design of Equipment
Toshiba’s New Discrete IGBT for Voltage Resonance Circuits Contributes to Lower Power Consumption and Easier Design of Equipment

TOKYO--(BUSINESS WIRE)--Dec 23, 2019--

Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched the “GT20N135SRA,” a 1350V discrete IGBT for use in voltage resonance circuits in tabletop IH cookers, IH rice cookers, microwave ovens and other home appliances. Shipments start today.

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Toshiba: a 1350V discrete IGBT “GT20N135SRA” for use in voltage resonance circuits in tabletop IH cookers and other home appliances. (Photo: Business Wire)

GT20N135SRA features a collector-emitter saturation voltage [1] of 1.75V and a diode forward voltage [2] of 1.8V, approximately 10% and 21% lower, respectively, than for the current product [3]. Both the IGBT and diode have improved conduction loss characteristics at high temperature (T C =100℃), and the new IGBT can help reduce equipment power consumption. It also features a junction-to-case thermal resistance of 0.48℃/W (max), about 26% lower than that of the current product [3], allowing easier thermal design.

The new IGBT suppresses short circuit current that flows through the resonance capacitor when equipment is switched on. Its circuit current [4] peak value is 129A, about a 31% reduction from the current product [3]. As its safe operating area is widened, it makes equipment design easier compared to the current product [3].

Applications

Home appliances (such as tabletop IH cookers, IH rice cookers and microwave ovens) that use voltage resonance circuits

Features

Main Specifications

(Unless otherwise specified, @T a =25 °C)

Part

Number

Package

Absolute maximum ratings

Collector-emitter saturation voltage

V CE(sat)

typ.

@I C =20A,

V GE =15V

(V)

Diode forward voltage

V F

typ.

@I F =20A,

V GE =0V

(V)

Switching time

(fall time)

t f

typ.

@Resistive load

(μs)

Junction-to-case thermal resistance

R th(j-C)

max

(℃/W)

Collector-emitter voltage

V CES

(V)

Collector current

(DC)

I C

@T C =25℃

(A)

Collector current

(DC)

I C

@T C =100℃

(A)

Junction temperature

T j

(℃)

GT20N135SRA

TO-247

1350

40

20

175

1.60

1.75

0.25

0.48

Notes:
[1] As of June 2019, values measured by Toshiba. (Test condition: I C =20A, V GE =15V, T C =100℃)
[2] As of June 2019, values measured by Toshiba. (Test condition: I F =20A, V GE =0V, T C =100℃)
[3] Toshiba’s current product “GT40RR21”
[4] As of June 2019, values measured by Toshiba. (Test condition: V CC =300V, V GG =15V, C=0.33μF, t=5μs, T a =25℃)

Follow the link below for more on the new product.
GT20N135SRA
https://toshiba.semicon-storage.com/info/lookup.jsp?pid=GT20N135SRA

Follow the link below for more on Toshiba IGBT line-up.
https://toshiba.semicon-storage.com/ap-en/product/igbt-iegt/igbt.html

*Company names, product names, and service names may be trademarks of their respective companies.

Customer Inquiries:
Power Device Sales & Marketing Department
Tel: +81-3-3457-3933
https://toshiba.semicon-storage.com/ap-en/contact.html

Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

About Toshiba Electronic Devices & Storage Corporation
Toshiba Electronic Devices & Storage Corporation combines the vigor of a new company with the wisdom of experience. Since becoming an independent company in July 2017, we have taken our place among the leading general devices companies, and offer our customers and business partners outstanding solutions in discrete semiconductors, system LSIs and HDD.

Our 19,000 employees around the world share a determination to maximize the value of our products, and emphasize close collaboration with customers to promote co-creation of value and new markets. We look forward to building on annual sales now surpassing 700-billion yen (US$6 billion) and to contributing to a better future for people everywhere.
Find out more about us at https://toshiba.semicon-storage.com/ap-en/company.html

View source version on businesswire.com:https://www.businesswire.com/news/home/20191222005005/en/

CONTACT: Media Inquiries:

Toshiba Electronic Devices & Storage Corporation

Digital Marketing Department

Chiaki Nagasawa

Tel: +81-3-3457-4963

e-mail:semicon-NR-mailbox@ml.toshiba.co.jp

KEYWORD: JAPAN ASIA PACIFIC

INDUSTRY KEYWORD: SEMICONDUCTOR CONSUMER ELECTRONICS TECHNOLOGY MANUFACTURING OTHER TECHNOLOGY OTHER MANUFACTURING HARDWARE

SOURCE: Toshiba Electronic Devices & Storage Corporation

Copyright Business Wire 2019.

PUB: 12/23/2019 12:00 AM/DISC: 12/23/2019 12:00 AM

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